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Technische Details 4N25(SHORT,F) Toshiba
Description: OPTOISO 2.5KV TRANS W/BASE 6-DIP, Voltage - Isolation: 2500Vrms, Current - Output / Channel: 100mA, Input Type: DC, Voltage - Forward (Vf) (Typ): 1.15V, Supplier Device Package: 6-DIP, Vce Saturation (Max): 500mV, Current Transfer Ratio (Min): 20% @ 10mA, Current - DC Forward (If) (Max): 80 mA, Number of Channels: 1, Rise / Fall Time (Typ): 2µs, 200µs, Voltage - Output (Max): 30V, Operating Temperature: -55°C ~ 100°C, Mounting Type: Through Hole, Output Type: Transistor with Base, Package / Case: 6-DIP (0.300", 7.62mm), Packaging: Tube.
Weitere Produktangebote 4N25(SHORT,F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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4N25(SHORT,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV TRANS W/BASE 6-DIPVoltage - Isolation: 2500Vrms Current - Output / Channel: 100mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Supplier Device Package: 6-DIP Vce Saturation (Max): 500mV Current Transfer Ratio (Min): 20% @ 10mA Current - DC Forward (If) (Max): 80 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 200µs Voltage - Output (Max): 30V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor with Base Package / Case: 6-DIP (0.300", 7.62mm) Packaging: Tube |
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