4N32(SHORT,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV DARL W/BASE 6DIP
Current - DC Forward (If) (Max): 80 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 100mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Darlington with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
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Technische Details 4N32(SHORT,F) Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV DARL W/BASE 6DIP, Current - DC Forward (If) (Max): 80 mA, Number of Channels: 1, Part Status: Obsolete, Turn On / Turn Off Time (Typ): 5µs, 100µs (Max), Voltage - Output (Max): 30V, Supplier Device Package: 6-DIP, Vce Saturation (Max): 1V, Current Transfer Ratio (Min): 500% @ 10mA, Voltage - Isolation: 2500Vrms, Current - Output / Channel: 100mA, Input Type: DC, Voltage - Forward (Vf) (Typ): 1.15V, Operating Temperature: -55°C ~ 100°C, Mounting Type: Through Hole, Output Type: Darlington with Base, Package / Case: 6-DIP (0.300", 7.62mm), Packaging: Tube.
Weitere Produktangebote 4N32(SHORT,F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 4N32(SHORT,F) | Hersteller : Toshiba |
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