Technische Details 50MT060WH TOS
Description: IGBT MODULE 600V 114A 658W 12MTP, Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V, Current - Collector Cutoff (Max): 400 µA, Power - Max: 658 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 114 A, IGBT Type: PT, Supplier Device Package: 12-MTP, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: 12-MTP Module.
Weitere Produktangebote 50MT060WH
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| 50MT060WH | International Rectifier |
 ``HALF-BRIDGE`` IGBT MTP, VCES = 600V, VCE(on)=2.3V, VGE=15V, Ic=50A Силові IGBT-модулі |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 50MT060WH | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 114A 658W 12MTP Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V Current - Collector Cutoff (Max): 400 µA Power - Max: 658 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 114 A IGBT Type: PT Supplier Device Package: 12-MTP NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: 12-MTP Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 50MT060WH |
|
Hersteller: International Rectifier
``HALF-BRIDGE`` IGBT MTP, VCES = 600V, VCE(on)=2.3V, VGE=15V, Ic=50A Силові IGBT-модулі
``HALF-BRIDGE`` IGBT MTP, VCES = 600V, VCE(on)=2.3V, VGE=15V, Ic=50A Силові IGBT-модулі
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 50MT060WH |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 114A 658W 12MTP
Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 658 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 114 A
IGBT Type: PT
Supplier Device Package: 12-MTP
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Description: IGBT MODULE 600V 114A 658W 12MTP
Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 658 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 114 A
IGBT Type: PT
Supplier Device Package: 12-MTP
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH