5LN01M-TL-E onsemi
Hersteller: onsemiDescription: MOSFET N-CH 50V 100MA 3MCP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: MCP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3806+ | 0.13 EUR |
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Technische Details 5LN01M-TL-E onsemi
Description: MOSFET N-CH 50V 100MA 3MCP, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V, Power Dissipation (Max): 150mW (Ta), Supplier Device Package: MCP, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V.
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Verfügbarkeit |
Preis ohne MwSt |
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| 5LN01M-TL-E | Hersteller : ONSEMI |
Description: ONSEMI - 5LN01M-TL-E - 5LN01M-TL-E, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
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5LN01M-TL-E | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 50V 0.1A 3-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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5LN01M-TL-E | Hersteller : onsemi |
Description: MOSFET N-CH 50V 100MA 3MCP Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: MCP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V |
Produkt ist nicht verfügbar |