5LN01M-TL-H onsemi
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA 3MCP
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: MCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 3030+ | 0.15 EUR |
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Technische Details 5LN01M-TL-H onsemi
Description: MOSFET N-CH 50V 100MA 3MCP, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V, Power Dissipation (Max): 150mW (Ta), Supplier Device Package: MCP, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V.
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