5LN01S-TL-E onsemi
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA SMCP
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: SMCP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
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Technische Details 5LN01S-TL-E onsemi
Description: MOSFET N-CH 50V 100MA SMCP, Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Part Status: Obsolete, Supplier Device Package: SMCP, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).
Weitere Produktangebote 5LN01S-TL-E
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5LN01S-TL-E | onsemi |
Description: MOSFET N-CH 50V 100MA SMCP Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Part Status: Obsolete Supplier Device Package: SMCP Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 5LN01S-TL-E |
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA SMCP
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Obsolete
Supplier Device Package: SMCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 50V 100MA SMCP
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Obsolete
Supplier Device Package: SMCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH