5LN01SS-TL-E onsemi
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA 3SSFP
Packaging: Bulk
Package / Case: SC-81
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: 3-SSFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 2597+ | 0.24 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2597 Stücke
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Produktbewertung abgeben
Technische Details 5LN01SS-TL-E onsemi
Description: MOSFET N-CH 50V 100MA 3SSFP, Packaging: Tape & Reel (TR), Package / Case: SC-81, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V, Power Dissipation (Max): 150mW (Ta), Supplier Device Package: 3-SSFP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V.
Weitere Produktangebote 5LN01SS-TL-E nach Preis ab 0.24 EUR bis 0.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
 |
5LN01SS-TL-E | ON Semiconductor |
MOSFET SWITCHING DEVICE |
auf Bestellung 7667 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| 5LN01SS-TL-E | Sanyo |
Description: N-CHANNEL SILICON MOSFET Packaging: Bulk Package / Case: SC-81 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: 3-SSFP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V |
auf Bestellung 7970 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||
| 5LN01SS-TL-E | ONSEMI |
Description: ONSEMI - 5LN01SS-TL-E - 5LN01SS-TL-E, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 7970 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 7970 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 5LN01SS-TL-E |
|
Hersteller: ON Semiconductor
MOSFET SWITCHING DEVICE
MOSFET SWITCHING DEVICE
auf Bestellung 7667 Stücke:
Lieferzeit 10-14 Tag (e)
| 5LN01SS-TL-E |
|
Hersteller: Sanyo
Description: N-CHANNEL SILICON MOSFET
Packaging: Bulk
Package / Case: SC-81
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: 3-SSFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
Description: N-CHANNEL SILICON MOSFET
Packaging: Bulk
Package / Case: SC-81
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: 3-SSFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
auf Bestellung 7970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2597+ | 0.24 EUR |
| 5LN01SS-TL-E |
|
Hersteller: ONSEMI
Description: ONSEMI - 5LN01SS-TL-E - 5LN01SS-TL-E, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 5LN01SS-TL-E - 5LN01SS-TL-E, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 7970 Stücke:
Lieferzeit 14-21 Tag (e)