5LN01SS-TL-E onsemi
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA 3SSFP
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Packaging: Bulk
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Obsolete
Supplier Device Package: 3-SSFP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-81
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Technische Details 5LN01SS-TL-E onsemi
Description: MOSFET N-CH 50V 100MA 3SSFP, Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Part Status: Obsolete, Supplier Device Package: 3-SSFP, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-81, Packaging: Tape & Reel (TR).
Weitere Produktangebote 5LN01SS-TL-E nach Preis ab 0.12 EUR bis 0.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|
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5LN01SS-TL-E | ON Semiconductor |
MOSFET SWITCHING DEVICE |
auf Bestellung 7667 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| 5LN01SS-TL-E | Sanyo |
Description: N-CHANNEL SILICON MOSFET Packaging: Bulk Package / Case: SC-81 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: 3-SSFP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V |
auf Bestellung 7980 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||
| 5LN01SS-TL-E | ON Semiconductor |
|
auf Bestellung 7724 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 5LN01SS-TL-E |
|
Hersteller: ON Semiconductor
MOSFET SWITCHING DEVICE
MOSFET SWITCHING DEVICE
auf Bestellung 7667 Stücke:
Lieferzeit 10-14 Tag (e)
| 5LN01SS-TL-E |
|
Hersteller: Sanyo
Description: N-CHANNEL SILICON MOSFET
Packaging: Bulk
Package / Case: SC-81
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: 3-SSFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
Description: N-CHANNEL SILICON MOSFET
Packaging: Bulk
Package / Case: SC-81
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: 3-SSFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
auf Bestellung 7980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4121+ | 0.12 EUR |
| 5LN01SS-TL-E |
|
Hersteller: ON Semiconductor
auf Bestellung 7724 Stücke:
Lieferzeit 21-28 Tag (e)