5LP01SP-AC onsemi
Hersteller: onsemi
Description: MOSFET P-CH 50V 70MA 3SPA
Packaging: Bulk
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: 3-SPA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
Description: MOSFET P-CH 50V 70MA 3SPA
Packaging: Bulk
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: 3-SPA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3328+ | 0.15 EUR |
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Technische Details 5LP01SP-AC onsemi
Description: MOSFET P-CH 50V 70MA 3SPA, Packaging: Tape & Reel (TR), Package / Case: SC-72, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 70mA (Ta), Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V, Power Dissipation (Max): 250mW (Ta), Supplier Device Package: 3-SPA, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V.
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5LP01SP-AC | Hersteller : onsemi |
Description: MOSFET P-CH 50V 70MA 3SPA Packaging: Tape & Reel (TR) Package / Case: SC-72 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V Power Dissipation (Max): 250mW (Ta) Supplier Device Package: 3-SPA Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V |
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