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6706A

6706A Goford Semiconductor

6706A.pdf Hersteller: Goford Semiconductor
Description: MOSFET 30V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
Supplier Device Package: 8-SOP
Part Status: Active
Vgs(th) (Max) @ Id: 2V @ 250µA, 2.5V @ 250µA
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.2 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 6706A Goford Semiconductor

Description: MOSFET 30V 6.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), 5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V, Supplier Device Package: 8-SOP, Part Status: Active, Vgs(th) (Max) @ Id: 2V @ 250µA, 2.5V @ 250µA.

Weitere Produktangebote 6706A nach Preis ab 0.13 EUR bis 0.13 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
6706A Hersteller : GOFORD Semiconductor 6706A.pdf N-P CH 30V/-30V 6.5A/-5A 40mOhm/90mOhm MAX at 4.5V SOP-8
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.13 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
6706A 6706A Hersteller : Goford Semiconductor 6706A.pdf Description: MOSFET 30V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
Supplier Device Package: 8-SOP
Part Status: Active
Vgs(th) (Max) @ Id: 2V @ 250µA, 2.5V @ 250µA
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Im Einkaufswagen  Stück im Wert von  UAH