6A10-T/B MDD
Hersteller: MDDDescription: DIODE GEN PURP 1KV 6A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.61 EUR |
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Technische Details 6A10-T/B MDD
Description: DIODE GEN PURP 1KV 6A R-6, Packaging: Tape & Box (TB), Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 150pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote 6A10-T/B nach Preis ab 0.10 EUR bis 0.10 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| 6A10-T/B | Hersteller : Microdiode Electronics |
6A10-T/B |
auf Bestellung 18500 Stücke: Lieferzeit 14-21 Tag (e) |
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