6A100G A0G Taiwan Semiconductor

Description: DIODE GEN PURP 1KV 6A R-6, Packaging: Tape & Box (TB), Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.