6A100G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 6A R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.54 EUR |
| 2000+ | 0.49 EUR |
| 3000+ | 0.46 EUR |
| 5000+ | 0.44 EUR |
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Technische Details 6A100G Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 6A R6, Packaging: Tape & Reel (TR), Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote 6A100G nach Preis ab 0.6 EUR bis 1.9 EUR
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6A100G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 6A R6 Packaging: Cut Tape (CT) Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 6959 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 6A100G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 6A R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 6A R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 6959 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.9 EUR |
| 18+ | 1.19 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |