71256L100DB Renesas Electronics
auf Bestellung 129 Stücke:
Lieferzeit 449-453 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 63.2 EUR |
| 10+ | 58.61 EUR |
| 26+ | 56.51 EUR |
| 52+ | 55.11 EUR |
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Technische Details 71256L100DB Renesas Electronics
Description: IC SRAM 256KBIT PARALLEL 28CDIP, Packaging: Tube, Package / Case: 28-CDIP (0.600", 15.24mm), Mounting Type: Through Hole, Memory Size: 256Kbit, Memory Type: Volatile, Operating Temperature: -55°C ~ 125°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 28-CDIP, Write Cycle Time - Word, Page: 100ns, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 32K x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote 71256L100DB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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71256L100DB | Hersteller : Renesas Electronics Corporation |
 Description: IC SRAM 256KBIT PARALLEL 28CDIPPackaging: Tube Package / Case: 28-CDIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-CDIP Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
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