| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.53 EUR |
| 10+ | 15.23 EUR |
| 25+ | 14.91 EUR |
| 100+ | 13.32 EUR |
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Technische Details 71V416S10BEG Renesas / IDT
Description: IC SRAM 4MBIT PARALLEL 48CABGA, DigiKey Programmable: Not Verified, Memory Organization: 256K x 16, Access Time: 10 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 10ns, Supplier Device Package: 48-CABGA (9x9), Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 3V ~ 3.6V, Operating Temperature: 0°C ~ 70°C (TA), Memory Type: Volatile, Memory Size: 4Mbit, Mounting Type: Surface Mount, Package / Case: 48-TFBGA, Packaging: Tray.
Weitere Produktangebote 71V416S10BEG nach Preis ab 14.16 EUR bis 20.67 EUR
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71V416S10BEG | Renesas Electronics Corporation |
 Description: IC SRAM 4MBIT PARALLEL 48CABGADigiKey Programmable: Not Verified Memory Organization: 256K x 16 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Supplier Device Package: 48-CABGA (9x9) Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 48-TFBGA Packaging: Tray |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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71V416S10BEG | Renesas Electronics |
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |
auf Bestellung 225 Stücke: Lieferzeit 10-14 Tag (e) |
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| 71V416S10BEG |
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Hersteller: Renesas Electronics Corporation
Description: IC SRAM 4MBIT PARALLEL 48CABGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-CABGA (9x9)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tray
Description: IC SRAM 4MBIT PARALLEL 48CABGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-CABGA (9x9)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tray
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.06 EUR |
| 10+ | 15.86 EUR |
| 25+ | 15.37 EUR |
| 50+ | 15.01 EUR |
| 100+ | 14.64 EUR |
| 250+ | 14.16 EUR |
| 71V416S10BEG |
|
Hersteller: Renesas Electronics
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.67 EUR |
| 10+ | 19.23 EUR |
| 25+ | 18.62 EUR |
| 50+ | 18.2 EUR |
| 100+ | 17.74 EUR |
| 250+ | 16.9 EUR |
| 500+ | 16.46 EUR |