Produkte > MICROCHIP TECHNOLOGY > APT30GS60BRDLG

APT30GS60BRDLG Microchip Technology

Hersteller: Microchip Technology
Trans IGBT Chip N-CH 600V 54A 250000mW 3-Pin(3+Tab) TO-247 Tube

Produkt ist nicht verfügbar

Produktrezensionen

Technische Details APT30GS60BRDLG Microchip Technology

Description: IGBT 600V 54A 250W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/360ns, Switching Energy: 570µJ (off), Test Condition: 400V, 30A, 9.1Ohm, 15V, Gate Charge: 145 nC, Current - Collector (Ic) (Max): 54 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 113 A, Power - Max: 250 W.

Weitere Produktangebote APT30GS60BRDLG

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	APT30GS60BRDLG	Hersteller : Microsemi Corporation	Description: IGBT 600V 54A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 16ns/360ns Switching Energy: 570µJ (off) Test Condition: 400V, 30A, 9.1Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 113 A Power - Max: 250 W	Produkt ist nicht verfügbar
	APT30GS60BRDLG	Hersteller : Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi	Produkt ist nicht verfügbar