Technische Details APT30GS60BRDLG Microsemi
Description: IGBT 600V 54A 250W TO247, Switching Energy: 570µJ (off), Td (on/off) @ 25°C: 16ns/360ns, IGBT Type: NPT, Supplier Device Package: TO-247, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 250 W, Current - Collector Pulsed (Icm): 113 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 54 A, Gate Charge: 145 nC, Test Condition: 400V, 30A, 9.1Ohm, 15V.
Weitere Produktangebote APT30GS60BRDLG
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APT30GS60BRDLG | Hersteller : Microsemi Corporation |
 Description: IGBT 600V 54A 250W TO247Switching Energy: 570µJ (off) Td (on/off) @ 25°C: 16ns/360ns IGBT Type: NPT Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 250 W Current - Collector Pulsed (Icm): 113 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 54 A Gate Charge: 145 nC Test Condition: 400V, 30A, 9.1Ohm, 15V |
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| APT30GS60BRDLG | Hersteller : Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi |
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