APTM10HM19FT3G Microchip Technology
auf Bestellung 9 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 226.12 EUR |
| 100+ | 167.99 EUR |
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Technische Details APTM10HM19FT3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W, Type of module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 100V, Drain current: 50A, Case: SP3F, Topology: H-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 21mΩ, Pulsed drain current: 300A, Power dissipation: 208W, Technology: FREDFET; POWER MOS 5®, Gate-source voltage: ±30V, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM10HM19FT3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM10HM19FT3G | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 100V 70A 32-Pin Case SP-3 Tube |
Produkt ist nicht verfügbar |
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| APTM10HM19FT3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 50A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 300A Power dissipation: 208W Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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APTM10HM19FT3G | Hersteller : Microchip Technology |
Description: MOSFET 4N-CH 100V 70A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SP3 |
Produkt ist nicht verfügbar |
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| APTM10HM19FT3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 50A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 300A Power dissipation: 208W Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |