APTM120DA56T1G Microchip Technology

Description: MOSFET N-CH 1200V 18A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 25 V.