APTM120DA56T1G

Description: MOSFET N-CH 1200V 18A SP1, Package / Case: SP1, Supplier Device Package: SP1, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Drain to Source Voltage (Vdss): 1200V, Technology: MOSFET (Metal Oxide), Part Status: Obsolete, FET Type: N-Channel, Mounting Type: Chassis Mount, Power Dissipation (Max): 390W (Tc), Operating Temperature: -40°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V, Packaging: Bulk, Manufacturer: Microchip Technology.