APTM120DA56T1G Microsemi Corporation
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SP1
Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
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Technische Details APTM120DA56T1G Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SP1, Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SP1, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Power Dissipation (Max): 390W (Tc), Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Bulk.