APTM60H23FT1G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 15A; SP1; Ugs: ±30V; Idm: 125A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP1
On-state resistance: 230mΩ
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 125A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 8®
Drain current: 15A
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
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Technische Details APTM60H23FT1G MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 15A; SP1; Ugs: ±30V; Idm: 125A, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Type of module: MOSFET transistor, Semiconductor structure: transistor/transistor, Case: SP1, On-state resistance: 230mΩ, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, Pulsed drain current: 125A, Power dissipation: 208W, Technology: FREDFET; POWER MOS 8®, Drain current: 15A, Drain-source voltage: 600V, Anzahl je Verpackung: 1 Stücke.
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| APTM60H23FT1G | Hersteller : Microsemi Corporation |
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| APTM60H23FT1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 15A; SP1; Ugs: ±30V; Idm: 125A Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP1 On-state resistance: 230mΩ Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 125A Power dissipation: 208W Technology: FREDFET; POWER MOS 8® Drain current: 15A Drain-source voltage: 600V |
Produkt ist nicht verfügbar |