BSH111,215 NXP USA Inc.
Hersteller: NXP USA Inc.Description: MOSFET N-CH 55V 335MA SOT-23
Packaging: Bulk
Part Status: Active
auf Bestellung 362331 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5770+ | 0.13 EUR |
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Technische Details BSH111,215 NXP USA Inc.
Description: MOSFET N-CH 55V 335MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 335mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V, Power Dissipation (Max): 830mW (Tc), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: TO-236AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.
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auf Bestellung 18000 Stücke: Lieferzeit 7-21 Tag (e) |
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BSH111,215 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 55V 0.335A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| BSH111,215 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 335MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 335mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V Power Dissipation (Max): 830mW (Tc) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TO-236AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
Produkt ist nicht verfügbar |
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| BSH111,215 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 335MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 335mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V Power Dissipation (Max): 830mW (Tc) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TO-236AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
Produkt ist nicht verfügbar |