BUK7E3R5-60E,127 Nexperia
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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133+ | 1.14 EUR |
1000+ | 1.09 EUR |
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Technische Details BUK7E3R5-60E,127 Nexperia
Description: TRANSISTOR >30MHZ, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V, Power Dissipation (Max): 293W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V.
Weitere Produktangebote BUK7E3R5-60E,127 nach Preis ab 1.59 EUR bis 1.59 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK7E3R5-60E,127 | Hersteller : NXP USA Inc. |
Description: TRANSISTOR >30MHZ Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V |
auf Bestellung 710 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7E3R5-60E,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A I2PAK Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V |
auf Bestellung 25177 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7E3R5-60E,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W Kind of package: tube On-state resistance: 7.6mΩ Drain current: 120A Drain-source voltage: 60V Case: I2PAK; SOT226 Gate charge: 114nC Mounting: THT Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 785A Application: automotive industry Power dissipation: 293W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7E3R5-60E,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V |
Produkt ist nicht verfügbar |
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BUK7E3R5-60E,127 | Hersteller : Nexperia | MOSFET BUK7E3R5-60E/I2PAK/STANDARD MA |
Produkt ist nicht verfügbar |
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BUK7E3R5-60E,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W Kind of package: tube On-state resistance: 7.6mΩ Drain current: 120A Drain-source voltage: 60V Case: I2PAK; SOT226 Gate charge: 114nC Mounting: THT Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 785A Application: automotive industry Power dissipation: 293W Polarisation: unipolar |
Produkt ist nicht verfügbar |