BUK7E3R5-60E,127 Nexperia
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 121+ | 1.29 EUR |
| 126+ | 1.2 EUR |
| 130+ | 1.12 EUR |
| 132+ | 1.06 EUR |
| 133+ | 1.01 EUR |
| 1000+ | 0.97 EUR |
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Technische Details BUK7E3R5-60E,127 Nexperia
Description: TRANSISTOR >30MHZ, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V, Power Dissipation (Max): 293W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V.
Weitere Produktangebote BUK7E3R5-60E,127 nach Preis ab 1.59 EUR bis 1.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK7E3R5-60E,127 | Hersteller : NXP USA Inc. |
 Description: TRANSISTOR >30MHZPackaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V |
auf Bestellung 710 Stücke: Lieferzeit 10-14 Tag (e) |
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_SOT226 Pkg.jpg "BUK7E3R5-60E,127") |
BUK7E3R5-60E,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A I2PAK Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V |
auf Bestellung 25177 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK7E3R5-60E,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 785A Power dissipation: 293W Case: I2PAK; SOT226 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7E3R5-60E,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V |
Produkt ist nicht verfügbar |
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| BUK7E3R5-60E,127 | Hersteller : Nexperia |
MOSFET BUK7E3R5-60E/I2PAK/STANDARD MA |
Produkt ist nicht verfügbar |
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| BUK7E3R5-60E,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 785A Power dissipation: 293W Case: I2PAK; SOT226 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |