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FDC6322C

FDC6322C Fairchild Semiconductor

FAIRS15829-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N/P-CH 25V 0.22A SSOT6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA, 460mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 364497 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
606+1.2 EUR
Mindestbestellmenge: 606
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Technische Details FDC6322C Fairchild Semiconductor

Description: MOSFET N/P-CH 25V 0.22A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 220mA, 460mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SuperSOT™-6.

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FDC6322C FDC6322C Hersteller : ONSEMI FAIRS15829-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FDC6322C - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 364497 Stücke:
Lieferzeit 14-21 Tag (e)
FDC6322C Hersteller : Fairchild FAIRS15829-1.pdf?t.download=true&u=5oefqw FDC6322C.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
FDC6322C Hersteller : FAIRCHILD FAIRS15829-1.pdf?t.download=true&u=5oefqw FDC6322C.pdf SOT163
auf Bestellung 5900 Stücke:
Lieferzeit 21-28 Tag (e)
FDC6322C FDC6322C Hersteller : onsemi FDC6322C.pdf Description: MOSFET N/P-CH 25V 0.22A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA, 460mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
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