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FDD13AN06A0-F085

FDD13AN06A0-F085 onsemi / Fairchild

FDD13AN06_F085_D-2311967.pdf Hersteller: onsemi / Fairchild
MOSFET Trans N-Ch 60V 50 A 3-Pin 2+Tab
auf Bestellung 19573 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.78 EUR
22+ 2.47 EUR
100+ 2.18 EUR
500+ 2 EUR
1000+ 1.66 EUR
2500+ 1.54 EUR
5000+ 1.47 EUR
Mindestbestellmenge: 19
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Technische Details FDD13AN06A0-F085 onsemi / Fairchild

Description: MOSFET N-CH 60V 9.9A/50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V.

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FDD13AN06A0-F085 FDD13AN06A0-F085 Hersteller : onsemi fdd13an06_f085-d.pdf Description: MOSFET N-CH 60V 9.9A/50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 1061 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.26 EUR
10+ 3.8 EUR
100+ 2.97 EUR
500+ 2.45 EUR
1000+ 1.93 EUR
Mindestbestellmenge: 7
FDD13AN06A0_F085 FDD13AN06A0_F085 Hersteller : Fairchild Semiconductor FDD13AN06_F085.pdf Description: MOSFET N-CH 60V 50A DPAK
auf Bestellung 225212500 Stücke:
Lieferzeit 21-28 Tag (e)
FDD13AN06A0_F085 FDD13AN06A0_F085 Hersteller : Fairchild Semiconductor FDD13AN06_F085.pdf Description: MOSFET N-CH 60V 50A DPAK
auf Bestellung 2252 Stücke:
Lieferzeit 21-28 Tag (e)
FDD13AN06A0_F085 FDD13AN06A0_F085 Hersteller : Fairchild Semiconductor FDD13AN06_F085.pdf Description: MOSFET N-CH 60V 50A DPAK
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
FDD13AN06A0-F085 FDD13AN06A0-F085 Hersteller : ON Semiconductor fdd13an06_f085-d.pdf Trans MOSFET N-CH 60V 9.9A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FDD13AN06A0_F085 FDD13AN06A0_F085 Hersteller : Fairchild Semiconductor FDD13AN06_F085.pdf Description: MOSFET N-CH 60V 50A DPAK
Produkt ist nicht verfügbar
FDD13AN06A0-F085 FDD13AN06A0-F085 Hersteller : onsemi fdd13an06_f085-d.pdf Description: MOSFET N-CH 60V 9.9A/50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar