FDD3706

FDD3706

Hersteller: ON
N-Channel 20V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount D-PAK (TO-) Trans. FDD3706 DPAK TFDD3706
Anzahl je Verpackung: 5 Stücke

FDD,FDU3706.pdf FDD3706-D.pdf
verfügbar/auf Bestellung
auf Bestellung 10 Stücke
Lieferzeit 7-14 Tag (e)

19+ 1.67 EUR

Technische Details FDD3706

Description: MOSFET N-CH 20V 14.7A/50A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V, Power Dissipation (Max): 3.8W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V.

Preis FDD3706 ab 1.67 EUR bis 1.67 EUR

FDD3706
FDD3706
Hersteller: ON Semiconductor
Trans MOSFET N-CH 20V 14.7A 3-Pin(2+Tab) DPAK T/R
3661658772335857fdd3706.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD3706
Hersteller: ONSEMI
Material: FDD3706 SMD N channel transistors
FDD,FDU3706.pdf FDD3706-D.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD3706
Hersteller: ONSEMI
Material: FDD3706 SMD N channel transistors
FDD,FDU3706.pdf FDD3706-D.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD3706
FDD3706
Hersteller: ON Semiconductor / Fairchild
MOSFET 20V N-Ch PowerTrench
FDD3706-D-1807050.pdf
auf Bestellung 3513 Stücke
Lieferzeit 14-28 Tag (e)
FDD3706
Hersteller: ON Semiconductor
Trans MOSFET N-CH 20V 14.7A 3-Pin(2+Tab) DPAK T/R
FDD,FDU3706.pdf FDD3706-D.pdf
auf Bestellung 1 Stücke
Lieferzeit 14-21 Tag (e)
FDD3706
Hersteller: Rochester Electronics, LLC
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 1.882pF @ 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FDD3706-D.pdf
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
FDD3706
Hersteller: Rochester Electronics, LLC
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
FDD3706-D.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD3706
FDD3706
Hersteller: onsemi
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
FDD,FDU3706.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD3706
FDD3706
Hersteller: onsemi
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
FDD,FDU3706.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen