FDD3706 Fairchild Semiconductor

Description: MOSFET N-CH 20V 14.7A/50A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 44W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).