FDD6030BL
Technische Details FDD6030BL
Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252, (D-Pak), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.6W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.
Preis FDD6030BL ab 0 EUR bis 0 EUR
FDD6030BL Hersteller: FAIRCHILD D-PAK/ TO-252 ![]() |
9500 Stücke |
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FDD6030BL Hersteller: ![]() |
35500 Stücke |
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FDD6030BL Hersteller: Fairchild Semiconductor Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252, (D-Pak) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk ![]() |
auf Bestellung 71201 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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