FDD6680A

FDD6680A

Hersteller: FAIRCHID
01+
FDD6680A.pdf FAIRS21601-1.pdf?t.download=true&u=5oefqw
verfügbar/auf Bestellung
1675 Stücke

Technische Details FDD6680A

Description: MOSFET N-CH 30V 14A/56A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V, Power Dissipation (Max): 2.8W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V.

Preis FDD6680A ab 0 EUR bis 0 EUR

FDD6680A
FDD6680A
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 14A 3-Pin(2+Tab) DPAK T/R
fdd6680a.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD6680A
Hersteller: FAIRCHILD
TO-252
FDD6680A.pdf FAIRS21601-1.pdf?t.download=true&u=5oefqw
21000 Stücke
FDD6680A
Hersteller: FAIRCHILD
D-PAK/ TO-252
FDD6680A.pdf FAIRS21601-1.pdf?t.download=true&u=5oefqw
9500 Stücke
FDD6680A
FDD6680A
Hersteller: onsemi / Fairchild
MOSFET 30V N-Ch PowerTrench
FairchildSemiconductor_16132035333357-1191789.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD6680A
FDD6680A
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 14A/56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
FAIRS21601-1.pdf?t.download=true&u=5oefqw
auf Bestellung 209395 Stücke
Lieferzeit 21-28 Tag (e)
FDD6680A
FDD6680A
Hersteller: onsemi
Description: MOSFET N-CH 30V 14A/56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V
FDD6680A.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen