FDD6680AS Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 30V 55A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 60W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
auf Bestellung 10485 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 572+ | 1.35 EUR |
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Technische Details FDD6680AS Fairchild Semiconductor
Description: MOSFET N-CH 30V 55A TO252, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V, Power Dissipation (Max): 60W (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-252, (D-Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V.
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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FDD6680AS | Hersteller : onsemi / Fairchild |
MOSFET 30V NCH DPAK POWR TRENCH |
auf Bestellung 7 Stücke: Lieferzeit 14-28 Tag (e) |
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| FDD6680AS | Hersteller : FAIRCHILD |
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auf Bestellung 9500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD6680AS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 100A; 60W; DPAK Case: DPAK Drain-source voltage: 30V Drain current: 55A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 60W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDD6680AS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 100A; 60W; DPAK Case: DPAK Drain-source voltage: 30V Drain current: 55A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 60W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD |
Produkt ist nicht verfügbar |