FDD86567-F085

FDD86567-F085

Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) DPAK T/R
fdd86567_f085-d.pdf
verfügbar/auf Bestellung
auf Bestellung 480 Stücke
Lieferzeit 14-21 Tag (e)

69+ 2.32 EUR
81+ 1.89 EUR
85+ 1.74 EUR
108+ 1.31 EUR
250+ 1.09 EUR

Technische Details FDD86567-F085

Description: MOSFET N-CH 60V 100A DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 227W (Tj), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA.

Preis FDD86567-F085 ab 1.09 EUR bis 2.32 EUR

FDD86567-F085
FDD86567-F085
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) DPAK T/R
fdd86567_f085-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD86567-F085
Hersteller: ONSEMI
Material: FDD86567-F085 SMD N channel transistors
fdd86567_f085-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD86567-F085
Hersteller: ONSEMI
Material: FDD86567-F085 SMD N channel transistors
fdd86567_f085-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD86567-F085
FDD86567-F085
Hersteller: ON Semiconductor / Fairchild
MOSFET 60V, 100A, 2.6mO, DPAK
N-Channel PowerTrench
FDD86567_F085-D-1807228.pdf
auf Bestellung 14758 Stücke
Lieferzeit 14-28 Tag (e)
FDD86567-F085
FDD86567-F085
Hersteller: onsemi / Fairchild
MOSFET NMOS DPAK 60V 3.2 MOHM
FDD86567_F085_D-2312106.pdf
auf Bestellung 7500 Stücke
Lieferzeit 14-28 Tag (e)
FDD86567-F085
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) DPAK T/R
fdd86567_f085-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD86567-F085
FDD86567-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 100A DPAK
Power Dissipation (Max): 227W (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
fdd86567_f085-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD86567_F085
FDD86567_F085
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 100A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 227W
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
FDD86567_F085.pdf
auf Bestellung 1922 Stücke
Lieferzeit 21-28 Tag (e)
FDD86567_F085
FDD86567_F085
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 100A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 227W
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: DPAK
FDD86567_F085.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD86567_F085
FDD86567_F085
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 100A DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 227W
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type: MOSFET N-Channel, Metal Oxide
FDD86567_F085.pdf
auf Bestellung 1922 Stücke
Lieferzeit 21-28 Tag (e)
FDD86567-F085
FDD86567-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 100A DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
fdd86567_f085-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen