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FDD86567-F085

FDD86567-F085 onsemi

fdd86567_f085-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 60V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.63 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDD86567-F085 onsemi

Description: MOSFET N-CH 60V 100A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V, Power Dissipation (Max): 227W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 30 V, Qualification: AEC-Q101.

Weitere Produktangebote FDD86567-F085 nach Preis ab 1.53 EUR bis 5.09 EUR

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FDD86567-F085 FDD86567-F085 Hersteller : onsemi / Fairchild fdd86567_f085-d.pdf MOSFETs 60V, 100A, 2.6mO, DPAK
N-Channel PowerTrench
auf Bestellung 3432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.05 EUR
10+2.25 EUR
100+1.9 EUR
500+1.72 EUR
1000+1.66 EUR
2500+1.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDD86567-F085 FDD86567-F085 Hersteller : onsemi fdd86567_f085-d.pdf Description: MOSFET N-CH 60V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 8986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.09 EUR
10+3.31 EUR
100+2.3 EUR
500+1.86 EUR
1000+1.72 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDD86567_F085 FDD86567_F085 Hersteller : Fairchild Semiconductor FDD86567_F085.pdf Description: MOSFET N-CH 60V 100A DPAK
auf Bestellung 1922 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDD86567_F085 FDD86567_F085 Hersteller : Fairchild Semiconductor FDD86567_F085.pdf Description: MOSFET N-CH 60V 100A DPAK
auf Bestellung 1922 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDD86567_F085 FDD86567_F085 Hersteller : Fairchild Semiconductor FDD86567_F085.pdf Description: MOSFET N-CH 60V 100A DPAK
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