FDD8796 ON Semiconductor
auf Bestellung 596 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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311+ | 0.49 EUR |
316+ | 0.44 EUR |
317+ | 0.41 EUR |
318+ | 0.39 EUR |
500+ | 0.37 EUR |
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Technische Details FDD8796 ON Semiconductor
Description: MOSFET N-CH 25V 35A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 13 V.
Weitere Produktangebote FDD8796 nach Preis ab 0.55 EUR bis 1.53 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDD8796 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 25V 35A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 596 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8796 | Hersteller : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 13 V |
auf Bestellung 23432 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8796 | Hersteller : onsemi |
Description: MOSFET N-CH 25V 35A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 13 V |
auf Bestellung 418 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8796 | Hersteller : Fairchild |
auf Bestellung 3432 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD8796 | Hersteller : fairchild | 07+ to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD8796 | Hersteller : fairchild | to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD8796 | Hersteller : FSC | 09+ |
auf Bestellung 147972 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD8796 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 25V 35A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD8796 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 25V Drain current: 98A Pulsed drain current: 305A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDD8796 | Hersteller : onsemi |
Description: MOSFET N-CH 25V 35A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 13 V |
Produkt ist nicht verfügbar |
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FDD8796 | Hersteller : onsemi / Fairchild | MOSFETs LOW VOLTAGE |
Produkt ist nicht verfügbar |
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FDD8796 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 25V Drain current: 98A Pulsed drain current: 305A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |