Produkte > ONSEMI > FDH3632
FDH3632

FDH3632 onsemi


fdp3632-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 100V 12A/80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 445 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.47 EUR
10+ 9.63 EUR
100+ 7.79 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details FDH3632 onsemi

Description: MOSFET N-CH 100V 12A/80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.

Weitere Produktangebote FDH3632

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDH3632 Hersteller : FAIRCHILD fdp3632-d.pdf TO-3PL
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
FDH3632 FDH3632 Hersteller : ON Semiconductor fdp3632-d.pdf Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FDH3632 FDH3632 Hersteller : ON Semiconductor fdp3632-d.pdf Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FDH3632 Hersteller : ONSEMI fdp3632-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 800mA
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDH3632 FDH3632 Hersteller : onsemi / Fairchild FDP3632_D-2312837.pdf MOSFET TO-247 / FDH3632
Produkt ist nicht verfügbar
FDH3632 Hersteller : ONSEMI fdp3632-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 800mA
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar