FDH3632 ON Semiconductor
auf Bestellung 39150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 450+ | 3.32 EUR |
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Technische Details FDH3632 ON Semiconductor
Description: MOSFET N-CH 100V 12A/80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.
Weitere Produktangebote FDH3632 nach Preis ab 3.43 EUR bis 8.89 EUR
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FDH3632 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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FDH3632 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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FDH3632 | Hersteller : onsemi / Fairchild |
MOSFETs TO-247 / FDH3632 |
auf Bestellung 395 Stücke: Lieferzeit 10-14 Tag (e) |
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FDH3632 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 12A/80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
auf Bestellung 39459 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDH3632 | Hersteller : FAIRCHILD |
TO-3PL |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDH3632 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FDH3632 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FDH3632 | Hersteller : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 1 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FDH3632 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; TO247 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 310W Case: TO247 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |