FDI038AN06A0

FDI038AN06A0

FDI038AN06A0

Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 17A/80A I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: I2PAK (TO-262)

FAIRS45677-1.pdf?t.download=true&u=5oefqw
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1809 Stücke
Lieferzeit 21-28 Tag (e)

111+ 6.6 EUR

Technische Details FDI038AN06A0

Description: MOSFET N-CH 60V 17A/80A I2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 310W (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: I2PAK (TO-262).

Preis FDI038AN06A0 ab 6.6 EUR bis 6.6 EUR

FDI038AN06A0
Hersteller: ON Semiconductor

fdp038an06a0-d.pdf FAIRS45677-1.pdf?t.download=true&u=5oefqw
8000 Stücke
FDI038AN06A0
FDI038AN06A0
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) I2PAK Tube
fdp038an06a0-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDI038AN06A0
FDI038AN06A0
Hersteller: ON Semiconductor / Fairchild
MOSFET 60V 80a 0.0038 Ohms/ VGS=10V
FDP038AN06A0_D-2312691.pdf
auf Bestellung 748 Stücke
Lieferzeit 14-28 Tag (e)
FDI038AN06A0
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) I2PAK Tube
fdp038an06a0-d.pdf FAIRS45677-1.pdf?t.download=true&u=5oefqw
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDI038AN06A0
FDI038AN06A0
Hersteller: ON Semiconductor
Description: MOSFET N-CH 60V 17A/80A I2PAK
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
Power Dissipation (Max): 310W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK (TO-262)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
fdp038an06a0-d.pdf
auf Bestellung 2400 Stücke
Lieferzeit 21-28 Tag (e)