FDI038AN06A0 ON Semiconductor
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 113+ | 4.82 EUR |
| 500+ | 4.46 EUR |
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Technische Details FDI038AN06A0 ON Semiconductor
Description: MOSFET N-CH 60V 17A/80A I2PAK, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V.
Weitere Produktangebote FDI038AN06A0 nach Preis ab 4.94 EUR bis 4.94 EUR
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FDI038AN06A0 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 60V 17A/80A I2PAKPackaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
auf Bestellung 1432 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDI038AN06A0 | Hersteller : ON Semiconductor |
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auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDI038AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
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FDI038AN06A0 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 17A/80A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDI038AN06A0 | Hersteller : onsemi / Fairchild |
MOSFETs 60V 80a 0.0038 Ohms/VGS=10V |
Produkt ist nicht verfügbar |