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FDS2170N3

FDS2170N3 Fairchild Semiconductor

FAIRS43454-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 200V 3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
auf Bestellung 2627 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
145+4.97 EUR
Mindestbestellmenge: 145
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Technische Details FDS2170N3 Fairchild Semiconductor

Description: MOSFET N-CH 200V 3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-SO FLMP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V.

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FDS2170N3 Hersteller : FAIRCHILD FAIRS43454-1.pdf?t.download=true&u=5oefqw FDS2170N3.pdf 07+ SO-8
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
FDS2170N3 Hersteller : FAIRCHILD FAIRS43454-1.pdf?t.download=true&u=5oefqw FDS2170N3.pdf 09+
auf Bestellung 1018 Stücke:
Lieferzeit 21-28 Tag (e)
FDS2170N3 Hersteller : FAIRCHILD FAIRS43454-1.pdf?t.download=true&u=5oefqw FDS2170N3.pdf SO-8
auf Bestellung 26000 Stücke:
Lieferzeit 21-28 Tag (e)
FDS2170N3 Hersteller : FSC FAIRS43454-1.pdf?t.download=true&u=5oefqw FDS2170N3.pdf 09+
auf Bestellung 641 Stücke:
Lieferzeit 21-28 Tag (e)
FDS2170N3 FDS2170N3 Hersteller : onsemi FDS2170N3.pdf Description: MOSFET N-CH 200V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
Produkt ist nicht verfügbar
FDS2170N3 FDS2170N3 Hersteller : onsemi FDS2170N3.pdf Description: MOSFET N-CH 200V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
Produkt ist nicht verfügbar