FDS2170N3 Fairchild Semiconductor

Description: MOSFET N-CH 200V 3A 8SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-SO FLMP, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.