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FDS4501h

FDS4501h Fairchild Semiconductor

FAIRS34628-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N/P-CH 30V 9.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 40090 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
415+1.77 EUR
Mindestbestellmenge: 415
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Technische Details FDS4501h Fairchild Semiconductor

Description: MOSFET N/P-CH 30V 9.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A, Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V, Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.

Weitere Produktangebote FDS4501h nach Preis ab 1.23 EUR bis 2.91 EUR

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Preis ohne MwSt
FDS4501h FDS4501h Hersteller : onsemi / Fairchild FDS4501H_D-2312787.pdf MOSFET SO-8 COMP N-P-CH
auf Bestellung 7500 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
18+2.91 EUR
20+ 2.7 EUR
100+ 2.38 EUR
1000+ 2.17 EUR
2500+ 1.23 EUR
Mindestbestellmenge: 18
FDS4501h Hersteller : FAI FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf 02+
auf Bestellung 1847 Stücke:
Lieferzeit 21-28 Tag (e)
FDS4501h Hersteller : FAIR FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf SOP8
auf Bestellung 46 Stücke:
Lieferzeit 21-28 Tag (e)
FDS4501h Hersteller : FAIRCHILD FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf 09+
auf Bestellung 30018 Stücke:
Lieferzeit 21-28 Tag (e)
FDS4501h Hersteller : FAIRCHILD FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf SO-8
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
FDS4501h Hersteller : FSC FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)
FDS4501h Hersteller : fsc FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf 04+ sop
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FDS4501h Hersteller : FSC FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf 09+ SO-8
auf Bestellung 1037 Stücke:
Lieferzeit 21-28 Tag (e)
FDS4501h FDS4501h Hersteller : ONSEMI FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/-20V
Drain current: 9.3/-5.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20/±8V
On-state resistance: 80/29mΩ
Mounting: SMD
Gate charge: 21/27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS4501H FDS4501H Hersteller : ON Semiconductor fds4501h.pdf Trans MOSFET N/P-CH 30V/20V 9.3A/5.6A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
FDS4501h FDS4501h Hersteller : onsemi fds4501h-d.pdf Description: MOSFET N/P-CH 30V 9.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
FDS4501h FDS4501h Hersteller : onsemi fds4501h-d.pdf Description: MOSFET N/P-CH 30V 9.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
FDS4501h FDS4501h Hersteller : ONSEMI FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/-20V
Drain current: 9.3/-5.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20/±8V
On-state resistance: 80/29mΩ
Mounting: SMD
Gate charge: 21/27nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar