Technische Details FDS8926A FAI
Description: MOSFET 2N-CH 30V 5.5A 8-SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote FDS8926A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FDS8926A | Hersteller : FAIRCHILD |
09+ |
auf Bestellung 118 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDS8926A | Hersteller : FAIRCHILD |
SO-8 |
auf Bestellung 41000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDS8926A | Hersteller : FAIRCHILP |
9950 |
auf Bestellung 886 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDS8926A | Hersteller : FSC |
09+ |
auf Bestellung 1288 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS8926A | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 5.5A 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDS8926A | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 5.5A 8-SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDS8926A | Hersteller : Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDS8926A | Hersteller : onsemi / Fairchild |
MOSFET SO8,DUAL NCH ENHANCEMENT MODEL FIELD EFFECT TRANSISTOR |
Produkt ist nicht verfügbar |