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FDS8926A FAIRCHILD

FDS8926A.pdf FAIRS16135-1.pdf?t.download=true&u=5oefqw
Hersteller: FAIRCHILD
SO-8
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Technische Details FDS8926A FAIRCHILD

Description: MOSFET 2N-CH 30V 5.5A 8-SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.

Weitere Produktangebote FDS8926A

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FDS8926A ONS/FAI FDS8926A.pdf Транзистори
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FDS8926A FDS8926A onsemi FDS8926A.pdf Description: MOSFET 2N-CH 30V 5.5A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS8926A FDS8926A onsemi FDS8926A.pdf Description: MOSFET 2N-CH 30V 5.5A 8-SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Produkt ist nicht verfügbar
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FDS8926A FDS8926A Fairchild Semiconductor FAIRS16135-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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FDS8926A FDS8926A onsemi / Fairchild FDS8926A.pdf FAIRS16135-1.pdf?t.download=true&u=5oefqw MOSFET SO8,DUAL NCH ENHANCEMENT MODEL FIELD EFFECT TRANSISTOR
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FDS8926A FDS8926A.pdf
Hersteller: ONS/FAI
Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS8926A FDS8926A.pdf
FDS8926A
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 5.5A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS8926A FDS8926A.pdf
FDS8926A
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 5.5A 8-SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS8926A FAIRS16135-1.pdf?t.download=true&u=5oefqw
FDS8926A
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS8926A FDS8926A.pdf FAIRS16135-1.pdf?t.download=true&u=5oefqw
FDS8926A
Hersteller: onsemi / Fairchild
MOSFET SO8,DUAL NCH ENHANCEMENT MODEL FIELD EFFECT TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH