FGA25S125P-SN00337
verfügbar/auf Bestellung
auf Bestellung 7 Stücke
Lieferzeit 7-14 Tag (e)
auf Bestellung 7 Stücke
Lieferzeit 7-14 Tag (e)
Technische Details FGA25S125P-SN00337
Description: INSULATED GATE BIPOLAR TRANSISTO, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Bulk, Power - Max: 250 W, Current - Collector Pulsed (Icm): 75 A, Voltage - Collector Emitter Breakdown (Max): 1250 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, Gate Charge: 204 nC, Test Condition: 600V, 25A, 10Ohm, 15V, Switching Energy: 1.09mJ (on), 580µJ (off), Td (on/off) @ 25°C: 24ns/502ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A.
Preis FGA25S125P-SN00337 ab 4.27 EUR bis 7.44 EUR
 Hersteller: Fairchild Semiconductor Description: INSULATED GATE BIPOLAR TRANSISTO Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Bulk Power - Max: 250 W Current - Collector Pulsed (Icm): 75 A Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector (Ic) (Max): 50 A Part Status: Active Gate Charge: 204 nC Test Condition: 600V, 25A, 10Ohm, 15V Switching Energy: 1.09mJ (on), 580µJ (off) Td (on/off) @ 25°C: 24ns/502ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A 
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auf Bestellung 412 Stücke  Lieferzeit 21-28 Tag (e) |
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FGA25S125P-SN00337 Hersteller: ON Semiconductor Trans IGBT Chip N-CH 1250V 50A 250000mW 3-Pin(3+Tab) TO-3PN Tube
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auf Bestellung 400 Stücke Lieferzeit 14-21 Tag (e) |
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FGA25S125P-SN00337 Hersteller: ONSEMI Material: FGA25S125P-SN00337 THT IGBT transistors
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7 Stücke |
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 Hersteller: ON Semiconductor Trans IGBT Chip N-CH 1250V 50A 250000mW 3-Pin(3+Tab) TO-3PN Tube
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450 Stücke |
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FGA25S125P-SN00337 Hersteller: ON Semiconductor / Fairchild IGBT Transistors IGBT, 1250V, 25A, Shorted-anode
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auf Bestellung 98 Stücke Lieferzeit 14-28 Tag (e) |
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 Hersteller: onsemi Description: IGBT TRENCH/FS 1250V 50A TO3PN Current - Collector Pulsed (Icm): 75 A Packaging: Tube Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector (Ic) (Max): 50 A Part Status: Obsolete Gate Charge: 204 nC Test Condition: 600V, 25A, 10Ohm, 15V Switching Energy: 1.09mJ (on), 580µJ (off) Td (on/off) @ 25°C: 24ns/502ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Power - Max: 250 W
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