FGA25S125P-SN00337

FGA25S125P-SN00337

Hersteller: ONSEMI
Material: FGA25S125P-SN00337 THT IGBT transistors
fga25s125p-d.pdf FAIR-S-A0002366217-1.pdf?t.download=true&u=5oefqw
verfügbar/auf Bestellung
auf Bestellung 7 Stücke
Lieferzeit 7-14 Tag (e)

12+ 6.32 EUR
13+ 5.69 EUR
15+ 5.03 EUR
30+ 4.52 EUR

Technische Details FGA25S125P-SN00337

Description: INSULATED GATE BIPOLAR TRANSISTO, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Bulk, Power - Max: 250 W, Current - Collector Pulsed (Icm): 75 A, Voltage - Collector Emitter Breakdown (Max): 1250 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, Gate Charge: 204 nC, Test Condition: 600V, 25A, 10Ohm, 15V, Switching Energy: 1.09mJ (on), 580µJ (off), Td (on/off) @ 25°C: 24ns/502ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A.

Preis FGA25S125P-SN00337 ab 4.27 EUR bis 7.44 EUR

FGA25S125P-SN00337
FGA25S125P-SN00337
Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
Power - Max: 250 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 204 nC
Test Condition: 600V, 25A, 10Ohm, 15V
Switching Energy: 1.09mJ (on), 580µJ (off)
Td (on/off) @ 25°C: 24ns/502ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
FAIR-S-A0002366217-1.pdf?t.download=true&u=5oefqw
auf Bestellung 412 Stücke
Lieferzeit 21-28 Tag (e)
109+ 6.68 EUR
FGA25S125P-SN00337
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1250V 50A 250000mW 3-Pin(3+Tab) TO-3PN Tube
fga25s125p-d.pdf FAIR-S-A0002366217-1.pdf?t.download=true&u=5oefqw
auf Bestellung 400 Stücke
Lieferzeit 14-21 Tag (e)
22+ 7.44 EUR
24+ 6.46 EUR
25+ 5.97 EUR
50+ 5.71 EUR
100+ 4.27 EUR
FGA25S125P-SN00337
Hersteller: ONSEMI
Material: FGA25S125P-SN00337 THT IGBT transistors
fga25s125p-d.pdf FAIR-S-A0002366217-1.pdf?t.download=true&u=5oefqw
7 Stücke
FGA25S125P-SN00337
FGA25S125P-SN00337
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1250V 50A 250000mW 3-Pin(3+Tab) TO-3PN Tube
fga25s125p-d.pdf
450 Stücke
FGA25S125P-SN00337
Hersteller: ON Semiconductor / Fairchild
IGBT Transistors IGBT, 1250V, 25A, Shorted-anode
FGA25S125P-D-1808731.pdf
auf Bestellung 98 Stücke
Lieferzeit 14-28 Tag (e)
FGA25S125P-SN00337
FGA25S125P-SN00337
Hersteller: onsemi
Description: IGBT TRENCH/FS 1250V 50A TO3PN
Current - Collector Pulsed (Icm): 75 A
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Gate Charge: 204 nC
Test Condition: 600V, 25A, 10Ohm, 15V
Switching Energy: 1.09mJ (on), 580µJ (off)
Td (on/off) @ 25°C: 24ns/502ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Power - Max: 250 W
fga25s125p-d.pdf
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