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FQP10N20C

FQP10N20C ON Semiconductor

3671944219917866fqpf10n20c-d.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
107+1.48 EUR
112+ 1.36 EUR
193+ 0.76 EUR
Mindestbestellmenge: 107
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Technische Details FQP10N20C ON Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 9, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V, Power Dissipation (Max): 72W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.

Weitere Produktangebote FQP10N20C nach Preis ab 0.78 EUR bis 3.82 EUR

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FQP10N20C FQP10N20C Hersteller : Fairchild Semiconductor FAIRS45967-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
461+1.56 EUR
Mindestbestellmenge: 461
FQP10N20C FQP10N20C Hersteller : ON Semiconductor 3671944219917866fqpf10n20c-d.pdf Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
100+1.59 EUR
101+ 1.51 EUR
106+ 1.39 EUR
182+ 0.78 EUR
Mindestbestellmenge: 100
FQP10N20C FQP10N20C Hersteller : onsemi / Fairchild FQPF10N20C_D-2314039.pdf MOSFET 200V N-Ch MOSFET
auf Bestellung 99 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.82 EUR
16+ 3.46 EUR
100+ 2.7 EUR
500+ 2.22 EUR
Mindestbestellmenge: 14
FQP10N20C Hersteller : Fairchild FAIRS45967-1.pdf?t.download=true&u=5oefqw
auf Bestellung 33924 Stücke:
Lieferzeit 21-28 Tag (e)
FQP10N20C Hersteller : ON Semiconductor FAIRS45967-1.pdf?t.download=true&u=5oefqw
auf Bestellung 980 Stücke:
Lieferzeit 21-28 Tag (e)
FQP10N20C FQP10N20C Hersteller : ON Semiconductor 3671944219917866fqpf10n20c-d.pdf Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP10N20C FQP10N20C Hersteller : ONSEMI FAIRS45967-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQP10N20C FQP10N20C Hersteller : onsemi FAIRS45967-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
FQP10N20C FQP10N20C Hersteller : ONSEMI FAIRS45967-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar