FQP10N20C Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 17000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 461+ | 1.1 EUR |
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Technische Details FQP10N20C Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 9, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V, Power Dissipation (Max): 72W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
Weitere Produktangebote FQP10N20C nach Preis ab 0.69 EUR bis 2.59 EUR
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FQP10N20C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 320 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP10N20C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 320 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP10N20C | Hersteller : onsemi / Fairchild |
MOSFET 200V N-Ch MOSFET |
auf Bestellung 99 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQP10N20C | Hersteller : Fairchild |
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auf Bestellung 33924 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQP10N20C | Hersteller : ON Semiconductor |
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auf Bestellung 980 Stücke: Lieferzeit 21-28 Tag (e) |
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FQP10N20C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| FQP10N20C | Hersteller : ONSEMI |
FQP10N20C THT N channel transistors |
Produkt ist nicht verfügbar |
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FQP10N20C | Hersteller : onsemi |
Description: MOSFET N-CH 200V 9.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
Produkt ist nicht verfügbar |