FQPF8N90C Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
auf Bestellung 2796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 237+ | 2.06 EUR |
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Technische Details FQPF8N90C Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V.
Weitere Produktangebote FQPF8N90C nach Preis ab 2.06 EUR bis 4.52 EUR
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FQPF8N90C | Hersteller : onsemi |
Description: MOSFET N-CH 900V 6.3A TO220F Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V |
auf Bestellung 18964 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF8N90C | Hersteller : onsemi / Fairchild |
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auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQPF8N90C | Hersteller : ONSEMI |
Description: ONSEMI - FQPF8N90C - Leistungs-MOSFET, n-Kanal, 900 V, 6.3 A, 1.6 ohm, TO-220F Drain-Source-Spannung Vds: 900 Dauer-Drainstrom Id: 6.3 Qualifikation: - Verlustleistung Pd: 60 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 60 Bauform - Transistor: TO-220F Anzahl der Pins: 3 Produktpalette: QFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1.6 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 1.6 SVHC: Lead (17-Jan-2022) |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF8N90C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FQPF8N90C | Hersteller : onsemi |
Description: MOSFET N-CH 900V 6.3A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V |
Produkt ist nicht verfügbar |