FQPF8N90C ON Semiconductor
| Anzahl | Preis |
|---|---|
| 231+ | 2.35 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.88 EUR |
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Technische Details FQPF8N90C ON Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.
Weitere Produktangebote FQPF8N90C nach Preis ab 1.88 EUR bis 4.52 EUR
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FQPF8N90C | ON Semiconductor |
 Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 8684 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF8N90C | ON Semiconductor |
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 346 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF8N90C | ON Semiconductor |
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF8N90C | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 6 Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 2559 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF8N90C | onsemi |
Description: MOSFET N-CH 900V 6.3A TO220F Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 16054 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF8N90C | onsemi / Fairchild |
MOSFET QFC 900V 1.9OHM D2PAK |
auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQPF8N90C |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 8684 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 231+ | 2.35 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.88 EUR |
| FQPF8N90C |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 231+ | 2.35 EUR |
| FQPF8N90C |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 231+ | 2.35 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.88 EUR |
| FQPF8N90C |
|
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 2559 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 161+ | 2.81 EUR |
| FQPF8N90C |
|
Hersteller: onsemi
Description: MOSFET N-CH 900V 6.3A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 900V 6.3A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 16054 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 161+ | 2.81 EUR |
| FQPF8N90C |
|
Hersteller: onsemi / Fairchild
MOSFET QFC 900V 1.9OHM D2PAK
MOSFET QFC 900V 1.9OHM D2PAK
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4.52 EUR |
| 10+ | 4.1 EUR |
| 25+ | 3.85 EUR |
| 100+ | 3.29 EUR |