G3R12MT12K GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 98.03 EUR |
10+ | 91.28 EUR |
25+ | 88.72 EUR |
100+ | 84.99 EUR |
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Technische Details G3R12MT12K GeneSiC Semiconductor
Description: 1200V 12M TO-247-4 G3R SIC MOSFE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 157A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V, Power Dissipation (Max): 567W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 50mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V.
Weitere Produktangebote G3R12MT12K nach Preis ab 72.09 EUR bis 101.5 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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G3R12MT12K | Hersteller : GeneSiC Semiconductor | SiC MOSFETs 1200V 12mohm TO-247-4 G3R SiC MOSFET |
auf Bestellung 1195 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R12MT12K | Hersteller : GeneSiC Semiconductor | Silicon Carbide MOSFET N-Channel Enhancement Mode |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R12MT12K | Hersteller : GeneSiC Semiconductor | Silicon Carbide MOSFET N-Channel Enhancement Mode |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R12MT12K | Hersteller : GeneSiC Semiconductor | 1200V 12m TO-247-4 G3R SiC MOSFET |
Produkt ist nicht verfügbar |
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G3R12MT12K | Hersteller : GeneSiC Semiconductor | Silicon Carbide MOSFET N-Channel Enhancement Mode |
Produkt ist nicht verfügbar |