G3R160MT12D GeneSiC Semiconductor
auf Bestellung 510 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 10.21 EUR |
| 18+ | 8.84 EUR |
| 25+ | 8.15 EUR |
| 50+ | 7.82 EUR |
| 100+ | 7.06 EUR |
| 250+ | 6.07 EUR |
| 500+ | 5.35 EUR |
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Technische Details G3R160MT12D GeneSiC Semiconductor
Description: SIC MOSFET N-CH 22A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V, Power Dissipation (Max): 123W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 5mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V.
Weitere Produktangebote G3R160MT12D nach Preis ab 5.35 EUR bis 15.76 EUR
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G3R160MT12D | Hersteller : GeneSiC Semiconductor |
 Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 510 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R160MT12D | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W Mounting: THT Type of transistor: N-MOSFET Power dissipation: 123W Polarisation: unipolar Kind of package: tube Gate charge: 28nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 40A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.16Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 932 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R160MT12D | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W Mounting: THT Type of transistor: N-MOSFET Power dissipation: 123W Polarisation: unipolar Kind of package: tube Gate charge: 28nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 40A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.16Ω |
auf Bestellung 932 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R160MT12D | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R160MT12D | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 22A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 5mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V |
auf Bestellung 1603 Stücke: Lieferzeit 21-28 Tag (e) |
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G3R160MT12D | Hersteller : GeneSiC Semiconductor |
MOSFET 1200V 160mohm TO-247-3 G3R SiC MOSFET |
auf Bestellung 2992 Stücke: Lieferzeit 196-210 Tag (e) |
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| G3R160MT12D | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R160MT12D Produktcode: 182442 |
Transistoren > MOSFET N-CH Gehäuse: TO-247 Uds,V: 1200 V Idd,A: 13 A Rds(on), Ohm: 160 mOhm Ciss, pF/Qg, nC: 724/23 JHGF: THT |
Produkt ist nicht verfügbar
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G3R160MT12D | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
Produkt ist nicht verfügbar |