G3R30MT12K GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
auf Bestellung 1433 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.62 EUR |
10+ | 32.72 EUR |
25+ | 31.65 EUR |
100+ | 30.07 EUR |
250+ | 29.07 EUR |
500+ | 28.34 EUR |
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Technische Details G3R30MT12K GeneSiC Semiconductor
Description: SIC MOSFET N-CH 90A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 12mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V.
Weitere Produktangebote G3R30MT12K nach Preis ab 29.29 EUR bis 44.7 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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G3R30MT12K | Hersteller : GeneSiC Semiconductor | SiC MOSFETs 1200V 30mohm TO-247-4 G3R SiC MOSFET |
auf Bestellung 472 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R30MT12K | Hersteller : GeneSiC Semiconductor | Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R30MT12K | Hersteller : GeneSiC Semiconductor | Silicon Carbide MOSFET N Channel Enhancement Mode |
Produkt ist nicht verfügbar |
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G3R30MT12K | Hersteller : GeneSiC Semiconductor | Silicon Carbide MOSFET N Channel Enhancement Mode |
Produkt ist nicht verfügbar |
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G3R30MT12K | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W Drain-source voltage: 1.2kV Drain current: 63A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 400W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 155nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 200A Case: TO247-4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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G3R30MT12K | Hersteller : GeneSiC Semiconductor | Silicon Carbide MOSFET N Channel Enhancement Mode |
Produkt ist nicht verfügbar |
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G3R30MT12K | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W Drain-source voltage: 1.2kV Drain current: 63A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 400W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 155nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 200A Case: TO247-4 |
Produkt ist nicht verfügbar |